Counter electrode for electrochromic devices

ABSTRACT

The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims priority to U.S. patentapplication Ser. No. 15/507,734, filed Feb. 28, 2017, and titled“COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES,” which is a NationalPhase Applications of PCT/US15/47891, filed Sep. 1, 2015, and titled“COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES,” which claims the benefitof priority to U.S. Provisional Patent Application No. 62/046,864, filedSep. 5, 2014, and titled “COUNTER ELECTRODE FOR ELECTROCHROMIC DEVICES,”each of which is herein incorporated by reference in its entirety andfor all purposes.

BACKGROUND

Electrochromism is a phenomenon in which a material exhibits areversible electrochemically-mediated change in an optical property whenplaced in a different electronic state, typically by being subjected toa voltage change. The optical property is typically one or more ofcolor, transmittance, absorbance, and reflectance. One well knownelectrochromic material, for example, is tungsten oxide (WO₃). Tungstenoxide is a cathodic electrochromic material in which a colorationtransition, transparent to blue, occurs by electrochemical reduction.

Electrochromic materials may be incorporated into, for example, windowsand mirrors. The color, transmittance, absorbance, and/or reflectance ofsuch windows and mirrors may be changed by inducing a change in theelectrochromic material. One well known application of electrochromicmaterials, for example, is the rear view mirror in some cars. In theseelectrochromic rear view mirrors, the reflectivity of the mirror changesat night so that the headlights of other vehicles are not distracting tothe driver.

While electrochromism was discovered in the 1960's, electrochromicdevices have historically suffered from various problems that haveprevented the technology from realizing its full commercial potential.

SUMMARY

The embodiments herein relate to electrochromic materials,electrochromic stacks, electrochromic devices, as well as methods andapparatus for making such materials, stacks, and devices. In variousembodiments, a counter electrode material includes a novel compositionof materials. For instance, the counter electrode material may includenickel, tungsten, tin, and oxygen; combined as a mixed oxide. The mixedoxide may also include lithium or other charge carrier. These elementsmay be provided together and represented as “NiWSnO.” In certain casesthe composition of the counter electrode material satisfies certainconditions. Example conditions may include an atomic ratio of Ni:(W+Sn)that falls between about 1:1 and 4:1, for example between about 1:1 and3:1, or between about 1.5:1 and 3:1, or between about 1.5:1 and 2.5:1,or between about 2:1 and 2.5:1 in certain embodiments. Similarly, insome embodiments the atomic ratio of Ni:(W+Sn) is between about 2:1 and3:1. Another example condition relates to an atomic ratio of W:Sn in thecounter electrode material. The atomic ratio of W:Sn may fall betweenabout 1:9 and 9:1, for example between about 1:1 and 3:1, or betweenabout 1.5:1 and 2.5:1, or between about 1.5:1 and 2:1 in someembodiments. Another example condition relates to an atomic ratio ofNi:W in the counter electrode material. In certain embodiments, theatomic ratio of Ni:W in the counter electrode material is between about1:1 and 4:1, for example between about 1.5:1 and 3:1, or between about2:1 and 3:1. One or more of these example conditions may be satisfied bythe counter electrode material.

In certain aspects of the disclosed embodiments, the NiWSnO counterelectrode material is used to make a stack of electrochromic materials.The NiWSnO material may meet any one or more of the conditions listedabove or elsewhere herein. The stack may include a layer of NiWSnO as ananodically coloring material, along with a layer of a cathodicallycoloring material. One example of a cathodically coloring material istungsten oxide. In certain embodiments, a layer of an ionicallyconducting, electronically insulating material is provided between thelayer of NiWSnO and the layer of cathodically coloring material. Inother cases, the NiWSnO is deposited in direct physical contact with thecathodically coloring material, and no separate ionically conducting,electronically insulating material is provided between these layers. Thestack may be used in fabricating an electrochromic device.

In a related aspect of the disclosed embodiments, a method offabricating an electrochromic stack is provided. The method may includeforming a cathodically coloring layer including a cathodically coloringelectrochromic material, and forming an anodically coloring layerincluding nickel-tungsten-tin-oxide (NiWSnO). The NiWSnO may meet anyone or more of the conditions described above or elsewhere herein. Themethod may include depositing the cathodically coloring material layerin direct physical contact with the anodically coloring layer. In otherembodiments, an ion conductor layer is deposited in between theanodically coloring layer and the cathodically coloring layer. Formingthe anodically coloring layer may include sputtering one or more sputtertargets to form the NiWSnO. The sputter targets may include elementalmetals and/or alloys of metals, such metals including nickel, tungsten,and tin. The metals in the one or more targets may also be provided asoxides.

In another aspect of the disclosed embodiments, an electrochromic devicehaving a NiWSnO anodically coloring layer is provided. The NiWSnOanodically coloring layer may meet one or more of the conditionsdescribed above and elsewhere herein. The electrochromic device mayinclude an electrochromic stack as described above. For instance, theelectrochromic device may include a layer of cathodically coloringmaterial in addition to the layer of NiWSnO anodically coloring layer.The NiWSnO may be deposited by the methods described herein. In someembodiments the anodically coloring layer is substantially amorphous. Insome cases the anodically coloring layer includes an amorphous matrix ofa first material having a second, crystalline, material dispersedthroughout the amorphous matrix.

In a further aspect of the disclosed embodiments, an integrateddeposition system for fabricating an electrochromic stack is provided.The system may include a plurality of deposition stations aligned inseries and interconnected and operable to pass a substrate from onestation to the next without exposing the substrate to an externalenvironment, where the plurality of deposition stations include (i) afirst deposition station having one or more material sources fordepositing a cathodically coloring layer, and (ii) a second depositionstation including one or more material sources for depositing ananodically coloring layer including nickel-tungsten-tin-oxide (NiWSnO);and a controller having program instructions for passing the substratethrough the plurality of stations in a manner that deposits on thesubstrate (i) the cathodically coloring layer, and (ii) the anodicallycoloring layer to form a stack including at least the cathodicallycoloring layer and the anodically coloring layer.

The second deposition station may be configured to deposit the NiWSnO tomeet any of the conditions described above or elsewhere herein. In somecases, at least one of the one or more material sources for depositingthe NiWSnO includes one or more elemental metals selected from the groupconsisting of: nickel, tungsten, and tin. In these or other cases, atleast one of the one or more material sources for depositing the NiWSnOinclude an alloy including two or more metals selected from the groupconsisting of nickel, tungsten, and tin. In these or other cases, atleast one of the sputter targets may include an oxide. The sputteringmay be done in an oxygen-containing atmosphere in various embodiments.

These and other features and advantages of the embodiments herein willbe described in further detail below, with reference to the associateddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description can be more fully understood whenconsidered in conjunction with the drawings in which:

FIG. 1 is a schematic cross-section of an electrochromic device inaccordance with certain embodiments.

FIG. 2 depicts a cross-sectional representation of an electrochromicwindow device in accord with the multistep process description providedin relation to FIG. 4.

FIG. 3 depicts a top view of an electrochromic device showing locationof trenches cut into the device.

FIG. 4 depicts a process flow describing a method of fabricating anelectrochromic window.

FIGS. 5-7 depict methods of fabricating an electrochromic stack which ispart of an electrochromic device according to certain embodiments.

FIG. 8A, depicts an integrated deposition system according to certainembodiments.

FIG. 8B depicts an integrated deposition system in a perspective view.

FIG. 8C depicts a modular integrated deposition system.

FIG. 8D depicts an integrated deposition system with two lithiumdeposition stations.

FIG. 8E depicts an integrated deposition system with one lithiumdeposition station.

FIG. 9A illustrates a rotating sputter target according to certainembodiments.

FIG. 9B shows a top-down view of two rotating sputter targets depositingmaterial on a substrate according to certain embodiments.

FIGS. 10A-10C relate to embodiments where a secondary sputter target isused to deposit material onto a primary sputter target, which thendeposits on a substrate according to certain embodiments.

FIG. 11 illustrates a hysteresis curve for depositing various opticallyswitchable materials.

DETAILED DESCRIPTION

Electrochromic Devices

A schematic cross-section of an electrochromic device 100 in accordancewith some embodiments is shown in FIG. 1. The electrochromic deviceincludes a substrate 102, a conductive layer (CL) 104, an electrochromiclayer (EC) 106 (sometimes also referred to as a cathodically coloringlayer), an ion conducting layer (IC) 108, a counter electrode layer (CE)110 (sometimes also referred to as an anodically coloring layer), and aconductive layer (CL) 114. Elements 104, 106, 108, 110, and 114 arecollectively referred to as an electrochromic stack 120. A voltagesource 116 operable to apply an electric potential across theelectrochromic stack 120 effects the transition of the electrochromicdevice from, e.g., a clear state to a tinted state. In otherembodiments, the order of layers is reversed with respect to thesubstrate. That is, the layers are in the following order: substrate,conductive layer, counter electrode layer, ion conducting layer,electrochromic material layer, conductive layer. In some embodiments,the ion conducting layer may be omitted, as discussed further below.

It should be understood that the reference to a transition between aclear state and tinted state is non-limiting and suggests only oneexample, among many, of an electrochromic transition that may beimplemented. Unless otherwise specified herein, whenever reference ismade to a clear-to-tinted transition, the corresponding device orprocess encompasses other optical state transitions suchnon-reflective-reflective, transparent-opaque, etc. Further the terms“clear” and “bleached” refer to an optically neutral state, e.g.,untinted, transparent or translucent. Still further, unless specifiedotherwise herein, the “color” or “tint” of an electrochromic transitionis not limited to any particular wavelength or range of wavelengths. Asunderstood by those of skill in the art, the choice of appropriateelectrochromic and counter electrode materials governs the relevantoptical transition.

In various embodiments herein, a counter electrode is fabricated toinclude nickel, tungsten, tin, and oxygen. In such counter electrodematerials, the amount of oxygen may vary depending on the stoichiometryof the metals used. The processing conditions used to make the counterelectrode may vary between different embodiments, resulting in a widerange of possible compositions (e.g., due to differences in valencestates/oxygen availability, etc.). Thus, rather than describing a myriadof possible oxygen amounts available or included in such formulations,“O” is used to represent all the oxygen in the material. The counterelectrode materials described herein are useful in lithium ion basedelectrochromic devices. In such devices, lithium ions are used to drivethe optical transitions, and some lithium is irreversibly bound in theelectrodes of such devices. The amount of lithium irreversibly bound inthe electrodes may vary depending on the embodiment. Further, thecounter electrode materials described herein are useful as counterelectrode materials, even in cases where the electrochromic device doesnot rely on/use lithium ions to drive optical transitions. In suchembodiments, a different (non-lithium) charge carrier may be used, andmay be similarly irreversibly bound within the counter electrodematerial. As such, in certain cases the stoichiometry of the materialsis described in terms of the relative ratio of the “heavy” metalconstituents, that is, all metals except e.g., lithium, which may or maynot be present in any given embodiment.

In certain embodiments, the electrochromic device reversibly cyclesbetween a clear state and a tinted state. In the clear state, apotential is applied to the electrochromic stack 120 such that availableions in the stack that can cause the electrochromic material 106 to bein the tinted state reside primarily in the counter electrode 110. Whenthe potential on the electrochromic stack is reversed, the ions aretransported across the ion conducting layer 108 to the electrochromicmaterial 106 and cause the material to enter the tinted state. A moredetailed description of the transition from clear to tinted state, andfrom tinted to clear state, is included below in the description ofFIGS. 2 and 3, but first the individual layers of stack 120 will bedescribed in more detail in relation to FIG. 1.

In certain embodiments, all of the materials making up electrochromicstack 120 are inorganic, solid (i.e., in the solid state), or bothinorganic and solid. Because organic materials tend to degrade overtime, inorganic materials offer the advantage of a reliableelectrochromic stack that can function for extended periods of time.Materials in the solid state also offer the advantage of not havingcontainment and leakage issues, as materials in the liquid state oftendo. Each of the layers in the electrochromic device is discussed indetail, below. It should be understood that any one or more of thelayers in the stack may contain some amount of organic material, but inmany implementations one or more of the layers contains little or noorganic matter. The same can be said for liquids that may be present inone or more layers in small amounts. It should also be understood thatsolid state material may be deposited or otherwise formed by processesemploying liquid components such as certain processes employing sol-gelsor chemical vapor deposition.

Referring again to FIG. 1, voltage source 116 is typically a low voltageelectrical source and may be configured to operate in conjunction withradiant and other environmental sensors. Any material having suitableoptical, electrical, thermal, and mechanical properties may be used assubstrate 102. Such substrates include, for example, glass, plastic, andmirror materials. Suitable plastic substrates include, for exampleacrylic, polystyrene, polycarbonate, allyl diglycol carbonate, SAN(styrene acrylonitrile copolymer), poly(4-methyl-l-pentene), polyester,polyamide, etc. If a plastic substrate is used, it is preferably barrierprotected and abrasion protected using a hard coat of, for example, adiamond-like protection coating, a silica/silicone anti-abrasioncoating, or the like, such as is well known in the plastic glazing art.Suitable glasses include either clear or tinted soda lime glass,including soda lime float glass. The glass may be tempered oruntempered. In some embodiments of electrochromic device 100 with glass,e.g., soda lime glass, used as substrate 102, there is a sodiumdiffusion barrier layer (not shown) between substrate 102 and conductivelayer 104 to prevent the diffusion of sodium ions from the glass intoconductive layer 104.

While the substrate 102 may be of any size, in some embodiments, it isabout 0.01 mm to 10 mm thick, preferably about 3 mm to 9 mm thick.

In some embodiments, the substrate is architectural glass. Architecturalglass is glass that is used as a building material. Architectural glassis typically used in commercial buildings, but may also be used inresidential buildings, and typically, though not necessarily, separatesan indoor environment from an outdoor environment. In certainembodiments, architectural glass is at least 20 inches by 20 inches, andcan be much larger, e.g., as large as about 72 inches by 120 inches.Architectural glass is typically at least about 2 mm thick.

On top of substrate 102 is conductive layer 104. In certain embodiments,one or both of the conductive layers 104 and 114 is inorganic and/orsolid. Conductive layers 104 and 114 may be made from a number ofdifferent materials, including conductive oxides, thin metalliccoatings, conductive metal nitrides, and composite conductors.Typically, conductive layers 104 and 114 are transparent at least in therange of wavelengths where electrochromism is exhibited by theelectrochromic layer. Transparent conductive oxides include metal oxidesand metal oxides doped with one or more metals. Examples of such metaloxides and doped metal oxides include indium oxide, indium tin oxide,doped indium oxide, tin oxide, doped tin oxide, zinc oxide, aluminumzinc oxide, doped zinc oxide, ruthenium oxide, doped ruthenium oxide andthe like. In some embodiments, commercially available substrates such asglass substrates contain a transparent conductive layer coating. Suchproducts may be used for both substrate 102 and conductive layer 104.Examples of such glasses include conductive layer coated glasses soldunder the trademark TEC Glass™ by Pilkington, of Toledo, Ohio andSUNGATE™ 300 and SUNGATE™ 500 by PPG Industries of Pittsburgh, Pa. TECGlass™ is a glass coated with a fluorinated tin oxide conductive layer.As well, thin glasses such as Gorilla Glass®, Willow Glass® and EagleXG® (each commercially available from Corning, Inc. of Corning, N.Y.)are suitable substrates for electrochromic devices described herein.

In some embodiments, the same conductive layer is used for bothconductive layers (i.e., conductive layers 104 and 114). In someembodiments, different conductive materials are used for each conductivelayer 104 and 114. For example, in some embodiments, TEC Glass™ is usedfor substrate 102 (float glass) and conductive layer 104 (fluorinatedtin oxide) and indium tin oxide is used for conductive layer 114. Insome embodiments employing TEC Glass™ there is a sodium diffusionbarrier between the glass substrate 102 and TEC conductive layer 104.

The function of the conductive layers is to spread an electric potentialprovided by voltage source 116 over surfaces of the electrochromic stack120 to interior regions of the stack, with very little ohmic potentialdrop. The electric potential is transferred to the conductive layersthough electrical connections to the conductive layers. In someembodiments, bus bars, one in contact with conductive layer 104 and onein contact with conductive layer 114, provide the electric connectionbetween the voltage source 116 and the conductive layers 104 and 114.The conductive layers 104 and 114 may also be connected to the voltagesource 116 with other conventional means.

The sheet resistance (R_(s)) of the conductive layers is also importantbecause of the relatively large area spanned by the layers. In someembodiments, the sheet resistance of conductive layers 104 and 114 isabout 1 to 30 Ohms per square, or about 5 to 30 Ohms per square. In someembodiments, the sheet resistance of conductive layers 104 and 114 isabout 15 Ohms per square. In general, it is desirable that the sheetresistance of each of the two conductive layers be about the same. Inone embodiment, the two layers each have a sheet resistance of about10-15 Ohms per square.

Overlaying conductive layer 104 is cathodically coloring layer 106 (alsoreferred to as electrochromic layer 106). In some embodiments,electrochromic layer 106 is inorganic and/or solid, in typicalembodiments inorganic and solid. The electrochromic layer may containany one or more of a number of different cathodically coloringelectrochromic materials, including metal oxides. Such metal oxidesinclude, e.g., tungsten oxide (WO₃), molybdenum oxide (MoO₃), niobiumoxide (Nb₂O₅), titanium oxide (TiO₂), vanadium oxide (V₂O₅) and tantalumoxide (Ta₂O₅). In some embodiments, the cathodically coloring metaloxide is doped with one or more dopants such as lithium, sodium,potassium, molybdenum, vanadium, titanium, and/or other suitable metalsor compounds containing metals. Such dopants can be cathodicallycoloring, anodically coloring, or non-electrochromic, so long as thebulk material is cathodically coloring. For example, mixed oxides (e.g.,W—Mo oxide, W—V oxide) are also used in certain embodiments. Anelectrochromic layer 106 comprising a metal oxide is capable ofreceiving ions transferred from counter electrode layer 110.

In some embodiments, tungsten oxide or doped tungsten oxide is used forelectrochromic layer 106. In one embodiment, the electrochromic layer ismade substantially of WO_(x), where “x” refers to an atomic ratio ofoxygen to tungsten in the electrochromic layer, and x is between about2.7 and 3.5. It has been suggested that only sub-stoichiometric tungstenoxide exhibits electrochromism; i.e., stoichiometric tungsten oxide,WO₃, does not exhibit electrochromism. In a more specific embodiment,WO_(x), where x is less than 3.0 and at least about 2.7 is used for theelectrochromic layer. In another embodiment, the electrochromic layer isWOx, where x is between about 2.7 and about 2.9. Techniques such asRutherford Backscattering Spectroscopy (RBS) can identify the totalnumber of oxygen atoms which include those bonded to tungsten and thosenot bonded to tungsten. In some instances, tungsten oxide layers where xis 3 or greater exhibit electrochromism, presumably due to unboundexcess oxygen along with sub-stoichiometric tungsten oxide. In anotherembodiment, the tungsten oxide layer has stoichiometric or greateroxygen, where x is 3.0 to about 3.5.

In certain embodiments, the tungsten oxide is crystalline,nanocrystalline, or amorphous. In some embodiments, the tungsten oxideis substantially nanocrystalline, with grain sizes, on average, fromabout 5 nm to 50 nm (or from about 5 nm to 20 nm), as characterized bytransmission electron microscopy (TEM). The tungsten oxide morphologymay also be characterized as nanocrystalline using x-ray diffraction(XRD); XRD. For example, nanocrystalline electrochromic tungsten oxidemay be characterized by the following XRD features: a crystal size ofabout 10 to 100 nm (e.g., about 55 nm. Further, nanocrystalline tungstenoxide may exhibit limited long range order, e.g., on the order ofseveral (about 5 to 20) tungsten oxide unit cells.

The thickness of the electrochromic layer 106 depends on thecathodically coloring material selected for the electrochromic layer. Insome embodiments, the electrochromic layer 106 is about 50 nm to 2,000nm, or about 200 nm to 700 nm. In some embodiments, the electrochromiclayer is about 300 nm to about 500 nm.

Generally, in cathodically coloring electrochromic materials, thecolorization/tinting (or change in any optical property—e.g.,absorbance, reflectance, and transmittance) of the electrochromicmaterial is caused by reversible ion insertion into the material (e.g.,intercalation) and a corresponding injection of a charge balancingelectron. Typically some fraction of the ion responsible for the opticaltransition is irreversibly bound up in the electrochromic material. Asexplained below some or all of the irreversibly bound ions are used tocompensate “blind charge” in the material. In most electrochromicmaterials, suitable ions include lithium ions (Li⁺) and hydrogen ions(H⁺) (i.e., protons). In some cases, however, other ions will besuitable. These include, for example, deuterium ions (D⁺), sodium ions(Na⁺), potassium ions (K⁺), calcium ions (Ca⁺⁺), barium ions (Ba⁺⁺),strontium ions (Sr⁺⁺), and magnesium ions (Mg⁺⁺). In various embodimentsdescribed herein, lithium ions are used to produce the electrochromicphenomena. Intercalation of lithium ions into tungsten oxide (WO_(3-y)(0<y≤˜0.3)) causes the tungsten oxide to change from transparent (clearstate) to blue (tinted state).

Referring again to FIG. 1, in electrochromic stack 120, ion conductinglayer 108 overlays electrochromic layer 106. On top of ion conductinglayer 108 is anodically coloring layer 110 (also referred to as counterelectrode layer 110). In some embodiments, counter electrode layer 110is inorganic and/or solid. The counter electrode layer may comprise oneor more of a number of different materials that are capable of servingas reservoirs of ions when the electrochromic device is in the clearstate. During an electrochromic transition initiated by, e.g.,application of an appropriate electric potential, the anodicallycoloring counter electrode layer transfers some or all of the ions itholds to the cathodically coloring electrochromic layer, changing theelectrochromic layer to the tinted state. Concurrently, in the case ofNiWSnO, the counter electrode layer tints with the loss of ions.

In various embodiments, the anodically coloring counter electrodematerial includes nickel, tungsten, tin, and oxygen. The materials maybe provided together as NiWSnO, at any appropriate composition. TheNiWSnO material is especially beneficial as an anodically coloringmaterial because it is particularly clear and color neutral in the clearstate. Many counter electrode materials are slightly tinted (colored)even in their clear states. For instance, NiWO generally has a slightyellow tint in the clear state. For aesthetic reasons, it is preferablethat both the cathodically coloring and anodically coloring materials inan electrochromic device are very clear (transparent) and colorless whenthe device is in the clear state. As such, NiWSnO is a valuablecandidate for the anodically coloring counter electrode material.

The NiWSnO may have various compositions when used as an anodicallycoloring material. In certain embodiments, particular balances may bemade between the various components of the NiWSnO. For instance, anatomic ratio of Ni:(W+Sn) in the material may fall between about 1:1 and4:1, for example between about 1:1 and 3:1, or between about 1.5:1 and3:1, or between about 1.5:1 and 2.5:1, or between about 2:1 and 2.5:1.In a particular example the atomic ratio of Ni:(W+Sn) is between about2:1 and 3:1. The atomic ratio of Ni:(W+Sn) relates to the ratio of (i)nickel atoms in the material to (ii) the sum of the number of tungstenand tin atoms in the material.

The NiWSnO material may also have a particular atomic ratio of W:Sn. Incertain embodiments, the atomic ratio of W:Sn is between about 1:9 and9:1, for example between about 1:1 and 3:1, or between about 1.5:1 and2.5:1, or between about 1.5:1 and 2:1. In some implementations,particular atomic ratios of Ni:(W+Sn) and W:Sn are used. For instance,the atomic ratio of Ni:(W+Sn) may be between about 1:1 and 3:1, wherethe atomic ratio of W:Sn is between about 1:1 and 3:1. In anotherexample, the atomic ratio of Ni:(W+Sn) may be between about 1.5:1 and2.5:1, where the atomic ratio of W:Sn is between about 1.5:1 and 2.5:1.In a further example, the atomic ratio of Ni:(W+Sn) may be between about2:1 and 2.5:1, where the atomic ratio of W:Sn is between about 1.5:1 and2:1.

Because anodically coloring counter electrode layer 110 contains theions used to produce the electrochromic phenomenon in the cathodicallycoloring electrochromic material when the cathodically coloringelectrochromic material is in the clear state, the anodically coloringcounter electrode preferably has high transmittance and a neutral colorwhen it holds significant quantities of these ions.

When charge is removed from an anodically coloring counter electrode110. e.g., made of conventional nickel tungsten oxide (i.e., ions aretransported from the counter electrode 110 to the electrochromic layer106), the counter electrode layer will turn from a (more or less)transparent state to a brown tinted state. Similarly, when charge isremoved from an anodically coloring counter electrode 110 made ofNiWSnO, the counter electrode layer will turn from a transparent stateto a brown tinted state. However, the transparent state of a NiWSnOcounter electrode layer may be more clear, having less color(particularly less yellow color (low b* color coordinate, for example)than the transparent state of a corresponding NiWO counter electrodelayer.

The counter electrode morphology may be crystalline, amorphous, or somemixture thereof. Crystalline phases may be nanocrystalline. In someembodiments, the nickel-tungsten-tin-oxide (NiWSnO) counter electrodematerial is amorphous or substantially amorphous. Various substantiallyamorphous counter electrodes have been found to perform better, undersome conditions, in comparison to their crystalline counterparts. Theamorphous state of the counter electrode oxide material may be obtainedthrough the use of certain processing conditions, described below. Whilenot wishing to be bound to any theory or mechanism, it is believed thatamorphous nickel-tungsten oxide or nickel-tungsten-tin oxide is producedby relatively low energy atoms in the sputtering process. Low energyatoms are obtained, for example, in a sputtering process with lowertarget powers, higher chamber pressures (i.e., lower vacuum), and/orlarger source to substrate distances. Amorphous films are also morelikely to form where there is a relatively higher fraction/concentrationof heavy atoms (e.g., W). Under the described process conditions filmswith better stability under UV/heat exposure are produced. Substantiallyamorphous materials may have some crystalline, typically but notnecessarily nanocrystalline, material dispersed in the amorphous matrix.The grain size and amounts of such crystalline materials are describedin more detail below.

In some embodiments, the counter electrode morphology may includemicrocrystalline, nanocrystalline and/or amorphous phases. For example,the counter electrode may be, e.g., a material with an amorphous matrixhaving nanocrystals distributed throughout. In certain embodiments, thenanocrystals constitute about 50% or less of the counter electrodematerial, about 40% or less of the counter electrode material, about 30%or less of the counter electrode material, about 20% or less of thecounter electrode material or about 10% or less of the counter electrodematerial (by weight or by volume depending on the embodiment). Incertain embodiments, the nanocrystals have a maximum diameter of lessthan about 50 nm, in some cases less than about 25 nm, less than about10 nm, or less than about 5 nm. In some cases, the nanocrystals have amean diameter of about 50 nm or less, or about 10 nm or less, or about 5nm or less (e.g., about 1-10 nm). In certain embodiments, it isdesirable to have a nanocrystal size distribution where at least about50% of the nanocrystals have a diameter within 1 standard deviation ofthe mean nanocrystal diameter, for example where at least about 75% ofthe nanocrystals have a diameter within 1 standard deviation of the meannanocrystal diameter or where at least about 90% of the nanocrystalshave a diameter within 1 standard deviation of the mean nanocrystaldiameter. It has been found that counter electrodes that include anamorphous matrix tend to operate more efficiently compared to counterelectrodes that are relatively more crystalline. In certain embodiments,the additive may form a host matrix in which domains of the baseanodically coloring material may be found.

In various cases, the host matrix is substantially amorphous. In certainembodiments, the only crystalline structures in the counter electrodeare formed from the base anodically coloring electrochromic material,in, e.g., oxide form. As mentioned, the additives may contribute toforming an amorphous host matrix that is not substantially crystalline,but which incorporates domains (e.g., nanocrystals in some cases) of thebase anodically coloring electrochromic material. In other embodiments,the additive and the anodically coloring base material together form achemical compound with covalent and/or ionic bonding. The compound maybe crystalline, amorphous, or a combination thereof. In otherembodiments, the anodically coloring base material forms a host matrixin which domains of the additive exist as discrete phases or pockets.For example certain embodiments include an amorphous counter electrodehaving an amorphous matrix of a first material, with a second material,also amorphous, distributed throughout the first material in pockets,for example, pockets of the diameters described herein for crystallinematerials distributed throughout an amorphous matrix.

In some embodiments, the thickness of the counter electrode is about 50nm about 650 nm. In some embodiments, the thickness of the counterelectrode is about 100 nm to about 400 nm, sometimes in the range ofabout 150 nm to 300 nm, or between about 200 nm to 300 nm. The thicknessof the counter electrode layer 110 is also substantially uniform. In oneembodiment, a substantially uniform counter electrode layer varies onlyabout ±10% in each of the aforementioned thickness ranges. In anotherembodiment, a substantially uniform counter electrode layer varies onlyabout ±5% in each of the aforementioned thickness ranges. In anotherembodiment, a substantially uniform counter electrode layer varies onlyabout ±3% in each of the aforementioned thickness ranges.

The amount of ions held in the counter electrode layer during the clearstate (and correspondingly in the electrochromic layer during the tintedstate) and available to drive the electrochromic transition depends onthe composition of the layers as well as the thickness of the layers andthe fabrication method. Both the electrochromic layer and the counterelectrode layer are capable of supporting available charge (in the formof lithium ions and electrons) in the neighborhood of several tens ofmillicoulombs per square centimeter of layer surface area. The chargecapacity of an electrochromic film is the amount of charge that can beloaded and unloaded reversibly per unit area and unit thickness of thefilm by applying an external voltage or potential. In one embodiment,the WO₃ layer has a charge capacity of between about 30 and about 150mC/cm²/micron. In another embodiment, the WO₃ layer has a chargecapacity of between about 50 and about 100 mC/cm²/micron. In oneembodiment, the NiWSnO layer has a charge capacity of between about 75and about 200 mC/cm²/micron. In another embodiment, the NiWSnO layer hasa charge capacity of between about 100 and about 150 mC/cm²/micron.

In between electrochromic layer 106 and counter electrode layer 110,there is often an ion conducting layer 108. Ion conducting layer 108serves as a medium through which ions are transported (in the manner ofan electrolyte) when the electrochromic device transforms between theclear state and the tinted state. Preferably, ion conducting layer 108is highly conductive to the relevant ions for the electrochromic and thecounter electrode layers, but has sufficiently low electron conductivitythat negligible electron transfer takes place during normal operation. Athin ion conducting layer (also sometimes referred to as an ionconductor layer) with high ionic conductivity permits fast ionconduction and hence fast switching for high performance electrochromicdevices. In certain embodiments, the ion conducting layer 108 isinorganic and/or solid. When fabricated from a material and in a mannerthat produces relatively few defects, the ion conductor layer can bemade very thin to produce a high performance device. In variousimplementations, the ion conductor material has an ionic conductivity ofbetween about 10⁸ Siemens/cm or ohm⁻¹ cm⁻¹ and about 10⁹ Siemens/cm orohm⁻¹ cm⁻¹ and aelectronic resistance of about 10¹¹ ohms-cm.

In other embodiments, the ion conductor layer may be omitted. In suchembodiments, no separate ion conductor material is deposited whenforming an electrochromic stack for an electrochromic device. Instead,in these embodiments the cathodically coloring electrochromic materialmay be deposited in direct physical contact with the anodically coloringcounter electrode material. One or both of the anodically coloring andcathodically coloring materials may be deposited to include a portionthat is oxygen rich compared to the remaining portion of the material.Typically, the oxygen rich portion is in contact with the other type oflayer. For instance, an electrochromic stack may include an anodicallycoloring material in contact with a cathodically coloring material,where the cathodically coloring material includes an oxygen-rich portionin direct physical contact with the anodically coloring material. Inanother example, an electrochromic stack includes an anodically coloringmaterial in contact with a cathodically coloring material, where theanodically coloring material includes an oxygen-rich portion in directphysical contact with the cathodically coloring material. In a furtherexample, both the anodically coloring material and the cathodicallycoloring material include an oxygen-rich portion, where the oxygen-richportion of the cathodically coloring material is in direct physicalcontact with the oxygen-rich portion of the anodically coloringmaterial.

The oxygen-rich portions of these layers may be provided as distinctsub-layers (e.g., a cathodically or anodically coloring materialincludes an oxygen-rich sublayer and a less-oxygen-rich sublayer). Theoxygen-rich portion of the layers may also be provided in a graded layer(e.g., the cathodically or anodically coloring material may include agradient in oxygen concentration, the gradient being in a directionnormal to surface of the layers). Embodiments where the ion conductorlayer is omitted and the anodically coloring counter electrode materialis in direct contact with the cathodically coloring electrochromicmaterial are further discussed in the following U.S. Patents, each ofwhich is herein incorporated by reference in its entirety: U.S. Pat.Nos. 8,300,298, and 8,764,950.

Returning to the embodiment of FIG. 1, examples of suitable materialsfor the lithium ion conductor layer include lithium silicate, lithiumaluminum silicate, lithium oxide, lithium tungstate, lithium aluminumborate, lithium borate, lithium zirconium silicate, lithium niobate,lithium borosilicate, lithium phosphosilicate, lithium nitride, lithiumoxynitride, lithium aluminum fluoride, lithium phosphorus oxynitride(LiPON), lithium lanthanum titanate (LLT), lithium tantalum oxide,lithium zirconium oxide, lithium silicon carbon oxynitride (LiSiCON),lithium titanium phosphate, lithium germanium vanadium oxide, lithiumzinc germanium oxide, and other ceramic materials that allow lithiumions to pass through them while having a high electrical resistance(blocking electron movement therethrough). Any material, however, may beused for the ion conducting layer 108 provided it can be fabricated withlow defectivity and it allows for the passage of ions between thecounter electrode layer 110 to the electrochromic layer 106 whilesubstantially preventing the passage of electrons.

In certain embodiments, the ion conducting layer is crystalline,amorphous, or a mixture thereof. Typically, the ion conducting layer isamorphous. In another embodiment, the ion conducting layer isnanocrystalline. In another embodiment, the ion conducting layer is amixed amorphous and crystalline phase, where the crystalline phase isnanocrystalline.

Ions transported across the ion conducting layer between theelectrochromic layer and the counter electrode layer serve to effect acolor change in the electrochromic layer (i.e., change theelectrochromic device from the clear state to the tinted state) whenthey reside in the electrochromic layer. For devices having anodicallycoloring counter electrode layers, the absence of these ions inducescolor in the counter electrode layer. Depending on the choice ofmaterials for the electrochromic device stack, such ions include lithiumions (Li⁺) and hydrogen ions (H⁺) (i.e., protons). As mentioned above,other ions may be employed in certain embodiments. These includedeuterium ions (D⁺), sodium ions (Na⁺), potassium ions (K⁻), calciumions (Ca⁺⁺), barium ions (Ba⁺⁺), strontium ions (Sr⁺⁺), and magnesiumions (Mg⁺⁺). In certain embodiments, hydrogen ions are not used becauseside reactions during operation of the device cause recombination tohydrogen gas which may escape the device and degrade performance. Thus,ions that do not have this issue, for example lithium ions, may be used.

The electrochromic device 100 may include one or more additional layers(not shown) such as one or more passive layers. Passive layers used toimprove certain optical properties may be included in electrochromicdevice 100. Passive layers for providing moisture or scratch resistancemay also be included in the electrochromic device 100. For example, theconductive layers may be treated with anti-reflective or protectiveoxide or nitride layers. Other passive layers may serve to hermeticallyseal the electrochromic device 100.

Electrochromic materials may contain blind charge. The blind charge inan electrochromic material is the charge (e.g., negative charge in thecases of tungsten oxide electrochromic material) that exists in thematerial as fabricated, absent compensation by oppositely charged ionsor other charge carriers. With tungsten oxide, for example, themagnitude of the blind charge depends upon the excess oxygenconcentration during sputtering of the tungsten oxide. Functionally,blind charge must be compensated before the ions employed to transformthe electrochromic material can effectively change an optical propertyof the electrochromic material. Without prior compensation of the blindcharge, ions supplied to an electrochromic material will irreversiblyincorporate in the material and have no effect on the optical state ofthe material. Thus, an electrochromic device is typically provided withions, such as lithium ions or protons, in an amount sufficient both tocompensate the blind charge and to provide a supply of ions forreversibly switching the electrochromic material between two opticalstates. In many known electrochromic devices, charge is lost during thefirst electrochemical cycle in compensating blind charge.

In some embodiments, lithium is present in the electrochromic stack 120in an amount sufficient to compensate the blind charge in theelectrochromic layer 106 and then an additional amount of about 1.5 to2.5 times the amount used to compensate the blind charge (by mass) inthe stack (initially in the counter electrode layer 110 for example).That is, there is about 1.5 to 2.5 times the amount of lithium needed tocompensate the blind charge that is provided for reversible cyclingbetween the electrochromic layer 106 and the counter electrode layer 110in the electrochromic stack 120. In some embodiments, there are enoughlithium in the electrochromic stack 120 to compensate the blind chargein the electrochromic layer 106 and then about two times this amount (bymass) in the counter electrode layer 110 or elsewhere in the stack.

In some embodiments, electrochromic glass is integrated into aninsulating glass unit (IGU). An insulating glass unit consists ofmultiple glass panes assembled into a unit, generally with the intentionof maximizing the thermal insulating properties of a gas contained inthe space formed by the unit while at the same time providing clearvision through the unit. Insulating glass units incorporatingelectrochromic glass would be similar to insulating glass unitscurrently known in the art, except for electrical leads for connectingthe electrochromic glass to voltage source. Due to the highertemperatures (due to absorption of radiant energy by an electrochromicglass) that electrochromic insulating glass units may experience, morerobust sealants than those used in conventional insulating glass unitsmay be necessary. For example, stainless steel spacer bars, hightemperature polyisobutylene (PIB), new secondary sealants, foil coatedPIB tape for spacer bar seams, and the like.

Method of Fabricating Electrochromic Windows

Deposition of the Electrochromic Stack

As mentioned in the summary above, one aspect of the embodiments hereinis a method of fabricating an electrochromic window. In a broad sense,the method includes sequentially depositing on a substrate (i) acathodically coloring electrochromic layer, (ii) an optional ionconducting layer, and (iii) an anodically coloring counter electrodelayer to form a stack. The sequential deposition employs a singleintegrated deposition system having a controlled ambient environment inwhich the pressure, temperature, and/or gas composition are controlledindependently of an external environment outside of the integrateddeposition system, and the substrate does not leave the integrateddeposition system at any time during the sequential deposition of theelectrochromic layer, the ion conducting layer, and the counterelectrode layer. (Examples of integrated deposition systems whichmaintain controlled ambient environments are described in more detailbelow in relation to FIGS. 8A-E.) The gas composition may becharacterized by the partial pressures of the various components in thecontrolled ambient environment. The controlled ambient environment alsomay be characterized in terms of the number of particles or particledensities. In certain embodiments, the controlled ambient environmentcontains fewer than 350 particles (of size 0.1 micrometers or larger)per m³. In certain embodiments, the controlled ambient environment meetsthe requirements of a class 100 clean room (US FED STD 209E). In certainembodiments, the controlled ambient environment meets the requirementsof a class 10 clean room (US FED STD 209E). The substrate may enterand/or leave the controlled ambient environment in a clean room meetingclass 1000, class 100, or even class 10 requirements.

Typically, but not necessarily, this method of fabrication is integratedinto a multistep process for making an electrochromic window usingarchitectural glass as the substrate. For convenience, the followingdescription contemplates the method and its various embodiments in thecontext of a multistep process for fabricating an electrochromic window,but methods herein are not so limited. Electrochromic mirrors and otherdevices may be fabricated using some or all of the operations andapproaches described herein.

FIG. 2 is a cross-sectional representation of an electrochromic windowdevice, 600, in accord with a multistep process such as that describedin relation to FIG. 4. FIG. 4 depicts a process flow describing amethod, 700, of fabricating an electrochromic window which incorporateselectrochromic device 600. FIG. 3 is a top view of device 600 showingthe location of trenches cut into the device. Thus, FIGS. 2-B and 4 willbe described together. One aspect of the description is anelectrochromic window including device 600 and another aspect of thedescription is a method, 700, of fabricating an electrochromic windowwhich includes device 600. Included in the following description aredescriptions of FIGS. 5-7. FIGS. 5-7 depict specific methods offabricating an electrochromic stack which is part of device 600.

FIG. 2 shows a specific example of an electrochromic device, 600, whichis fabricated starting with a substrate made of glass 605 whichoptionally has a diffusion barrier 610 coating and a first transparentconducting oxide (TCO) coating 615 on the diffusion barrier. Method 700employs a substrate that is, for example, float glass with sodiumdiffusion barrier and antireflective layers followed by a transparentconductive layer, for example a transparent conductive oxide 615. Asmentioned above, substrates suitable include glasses sold under thetrademarks TEC Glass® by Pilkington of Toledo, Ohio, and SUNGATE® 300and SUNGATE® 500 by PPG Industries, of Pittsburgh, Pa. The first TCOlayer 615 is the first of two conductive layers used to form theelectrodes of electrochromic device 600 fabricated on the substrate.

Method 700 begins with a cleaning process, 705, where the substrate iscleaned to prepare it for subsequent processing. One example of acleaning process and apparatus suitable in various embodiments is Lisec™(a trade name for a glass washing apparatus and process available from(LISEC Maschinenbau Gmbh of Seitenstetten, Austria).

Cleaning the substrate may include mechanical scrubbing as well assonication conditioning to remove unwanted particulates. As mentioned,particulates may lead to cosmetic flaws as well as local shorting withinthe device.

Once the substrate is cleaned, a first laser scribe process, 710, isperformed in order to remove a line of the first TCO layer on thesubstrate. In one embodiment, the resulting trench ablates through boththe TCO and the diffusion barrier (although in some cases the diffusionbarrier is not substantially penetrated). FIG. 2 depicts this firstlaser scribe trench, 620. A trench is scribed in the substrate acrossthe entire length of one side of the substrate in order to isolate anarea of the TCO, near one edge of the substrate, which will ultimatelymake contact with a first bus bar, 640, used to provide current to asecond TCO layer, 630, which is deposited on top of electrochromic (EC)stack 625 (which includes the electrochromic, ion conducting and counterelectrode layers as described above).

FIG. 3 shows schematically (not to scale) the location of trench 620. Inthe depicted embodiment, the non-isolated (main) portion of the firstTCO layer, on the diffusion barrier, ultimately makes contact with asecond bus bar, 645. Isolation trench 620 may be needed because, incertain embodiments, the method of attaching the first bus bar to thedevice includes pressing it through the device stack layers after theyare laid down (both on the isolated portion of the first TCO layer andthe main portion of the first TCO layer). Those of skill in the art willrecognize that other arrangements are possible for providing current tothe electrodes, in this case TCO layers, in the electrochromic device.The TCO area isolated by the first laser scribe is typically an areaalong one edge of the substrate that will ultimately, along with the busbars, be hidden when incorporated into the integrated glass unit (IGU)and/or window pane, frame or curtain wall. The laser or lasers used forthe first laser scribe are typically, but not necessarily, pulse-typelasers, for example diode-pumped solid state lasers. For example, thelaser scribes can be performed using a suitable laser from IPG Photonics(of Oxford Massachusetts), or from Ekspla (of Vilnius Lithuania).

After the first laser scribe 710, the substrate is cleaned again(operation 715), typically but not necessarily, using cleaning methodsdescribed above. This second cleaning process is performed to remove anydebris caused by the first laser scribe. Once cleaning operation 715 iscomplete, the substrate is ready for deposition of EC stack 625. This isdepicted in process flow 700 as process 720. As mentioned above, themethod includes sequentially depositing on a substrate (i) acathodically coloring EC layer, (ii) an optional IC layer, and (iii) ananodically coloring CE layer (e.g., NiWSnO in various embodiments) toform a stack in which the IC layer separates the EC layer and the CElayer using a single integrated deposition system having a controlledambient environment in which the pressure and/or gas composition arecontrolled independently of an external environment outside of theintegrated deposition system, and the substrate does not leave theintegrated deposition system at any time during the sequentialdeposition of the EC layer, the IC layer, and the CE layer.

In one embodiment, each of the sequentially deposited layers is physicalvapor deposited. In general the layers of the electrochromic device maybe deposited by various techniques including physical vapor deposition,chemical vapor deposition, plasma enhanced chemical vapor deposition,and atomic layer deposition, to name a few. The term physical vapordeposition as used herein includes the full range of art understood PVDtechniques including sputtering, evaporation, ablation, and the like.FIG. 5 depicts one embodiment of process 720. First the cathodicallycoloring EC layer is deposited on the substrate, process 722, then theIC layer is deposited, process 724 (as noted above, in certainembodiments the IC layer, and therefore process 724, are omitted), thenthe anodically coloring CE layer, process 726. The reverse order ofdeposition is also an embodiment, that is, where the CE layer isdeposited first, then the optional IC layer and then the EC layer. Inone embodiment, each of the electrochromic layer, the optional ionconducting layer, and the counter electrode layer is a solid phaselayer. In another embodiment, each of the electrochromic layer, theoptional ion conducting layer, and the counter electrode layer includesonly inorganic material.

It should be understood that while certain embodiments are described interms of a counter electrode layer, an ion conductor layer, and anelectrochromic layer, any one or more of these layers may be composed ofone or more sub-layers, which may have distinct compositions, sizes,morphologies, charge densities, optical properties, etc. Further any oneor more of the device layers may have a graded composition or a gradedmorphology in which the composition or morphology, respectively, changesover at least a portion of the thickness of the layer. In one example,the concentration of oxygen, a dopant, or charge carrier varies within agiven layer, at least as the layer is fabricated. In another example,the morphology of a layer varies from crystalline to amorphous. Suchgraded composition or morphology may be chosen to impact the functionalproperties of the device. In some cases, additional layers may be addedto the stack. In one example a heat spreader layer is interposed betweenone or both TCO layers and the EC stack.

Also, as described above, the electrochromic devices of certainembodiments utilize ion movement between the electrochromic layer andthe counter electrode layer via an ion conducting layer. In someembodiments these ions (or neutral precursors thereof) are introduced tothe stack as one or more layers (as described below in more detail inrelation to FIGS. 6 and 7) that eventually intercalate into the stack.In some embodiments these ions are introduced into the stackconcurrently with one or more of the electrochromic layer, the ionconducting layer, and the counter electrode layer. In one embodiment,where lithium ions are used, lithium is, e.g., sputtered along with thematerial used to make the one or more of the stack layers or sputteredas part of a material that includes lithium (e.g., by a method employinglithium nickel tungsten tin oxide). In one embodiment, the IC layer isdeposited via sputtering a lithium silicon aluminum oxide target. Inanother embodiment, the Li is cosputtered along with silicon aluminum inorder to achieve the desired film.

Referring again to process 722 in FIG. 5, in one embodiment, depositingthe electrochromic layer comprises depositing WO_(x). In one embodiment,depositing the electrochromic layer includes sputtering tungsten from atungsten containing target. In one such embodiment, a metallic tungsten(or tungsten alloy) target is used. In another embodiment (which mayalso employ a metallic tungsten target) the sputter gas is an inert gas(e.g., argon or xenon) with some oxygen containing gas (e.g., molecularor atomic oxygen) present. This is part of the controlled ambientenvironment that may be present in a deposition chamber or a stationwithin a larger chamber.

In one embodiment, in order to normalize the rate of deposition oftungsten, multiple targets are used so as to obviate the need forinappropriately high power (or other inappropriate adjustment to desiredprocess conditions) to increase deposition rate. The distance betweenthe target and the substrate may also be important. In one embodiment,the distance between the target (cathode or source) to the substratesurface is between about 35 mm and about 150 mm; in another embodimentbetween about 45 mm and about 130 mm; and in another embodiment betweenabout 70 mm and about 100 mm.

It should be understood that while deposition of the EC layer isdescribed in terms of sputtering from a target, other depositiontechniques are employed in some embodiments. For example, chemical vapordeposition, atomic layer deposition, and the like may be employed. Eachof these techniques, along with PVD, has its own form of material sourceas is known to those of skill in the art.

Referring again to FIG. 5, operation 724, once the EC layer isdeposited, the optional IC layer may be deposited.

Referring again to FIG. 5, operation 726, after the IC layer isdeposited, the CE layer is deposited. In one embodiment, depositing thecounter electrode layer includes depositing a layer ofnickel-tungsten-tin-oxide (NiWSnO). In a specific embodiment, depositingthe counter electrode layer includes sputtering a target including about30% (by weight) to about 70% of tungsten in nickel in an oxygencontaining environment to produce a layer of nickel tungsten tin oxide(the tin being provided by the tungsten in nickel target at anappropriate composition, or by another target, or through another sourcesuch as an evaporated tin source). In another embodiment the target isbetween about 40% and about 60% tungsten in nickel, in anotherembodiment between about 45% and about 55% tungsten in nickel, and inyet another embodiment about 51% tungsten in nickel.

In certain embodiments where the anodically coloring counter electrodelayer includes NiWSnO, many deposition targets or combinations oftargets may be used. For instance, individual metal targets of nickel,tungsten, and tin can be used. In other cases at least one of thetargets includes an alloy. For instance, an alloy target ofnickel-tungsten can be used together with a metal tin target. In anothercase, an alloy target of nickel-tin can be used together with a metaltungsten target. In a further case, an alloy of tungsten-tin can be usedtogether with a metal nickel target. In yet a further case, an alloytarget containing a nickel-tungsten-tin material may be used. Moreover,any of the listed targets can be provided as an oxide. Oftentimes,sputtering occurs in the presence of oxygen, and such oxygen isincorporated into the material. Sputter targets containing oxygen may beused alternatively or in addition to an oxygen-containing sputteringatmosphere.

The sputtering target(s) for forming the anodically coloring counterelectrode material may have compositions that permit the counterelectrode to be formed at any of the compositions described herein. Inone example where a single sputter target is used, the sputter targetmay have a composition that matches the composition of any of the NiWSnOmaterials disclosed herein. In other examples a combination of sputtertargets are used, and the composition of the combined targets allows fordeposition at any of the NiWSnO materials disclosed herein. Further, thesputter targets may be arranged in any way that permits the material tobe deposited as desired, as discussed further below. Metal targets aregenerally sputtered in oxygen with or without an inert gas such asargon. Metal oxide targets are typically sputtered in inert gas alone.One may use Ni, W and Sn metal targets, a NiW target with a Sn target,NiWO target with tin oxide target, etc. Various combinations arepossible. As another example, nickel tungsten tin alloy target or aNiWSnO target of the appropriate composition may be used if a singletarget is desired.

In one embodiment, the gas composition used when forming the CE containsbetween about 30% and about 100% oxygen, in another embodiment betweenabout 80% and about 100% oxygen, in yet another embodiment between about95% and about 100% oxygen, in another embodiment about 100% oxygen. Inone embodiment, the power density used to sputter the CE target isbetween about 2 Watts/cm² and about 50 Watts/cm² (determined based onthe power applied divided by the surface area of the target); in anotherembodiment between about 5 Watts/cm² and about 20 Watts/cm²; and in yetanother embodiment between about 8 Watts/cm² and about 10 Watts/cm², inanother embodiment about 8 Watts/cm². In some embodiments, the powerdelivered to effect sputtering is provided via direct current (DC). Inother embodiments, pulsed DC/AC reactive sputtering is used. In oneembodiment, where pulsed DC/AC reactive sputtering is used, thefrequency is between about 20 kHz and about 400 kHz, in anotherembodiment between about 20 kHz and about 50 kHz, in yet anotherembodiment between about 40 kHz and about 50 kHz, in another embodimentabout 40 kHz. The pressure in the deposition station or chamber, in oneembodiment, is between about 1 and about 50 mTorr, in another embodimentbetween about 20 and about 40 mTorr, in another embodiment between about25 and about 35 mTorr, in another embodiment about 30 mTorr. In somecases, a nickel tungsten oxide NiWO ceramic target is sputtered with,e.g., argon and oxygen. In one embodiment, the NiWO is between about 15%(atomic) Ni and about 60% Ni; between about 10% W and about 40% W; andbetween about 30% O and about 75% O. In another embodiment, the NiWO isbetween about 30% (atomic) Ni and about 45% Ni; between about 10% W andabout 25% W; and between about 35% O and about 50% O. In one embodiment,the NiWO is about 42% (atomic) Ni, about 14% W, and about 44% O. NiWOtargets may be used in combination with tin or tin oxide targets in somecases. In another embodiment, depositing the counter electrode layerincludes depositing the counter electrode layer to a thickness ofbetween about 150 and 350 nm; in yet another embodiment between about200 and about 250 nm thick. The above conditions may be used in anycombination with one another to effect deposition of a high qualityNiWSnO layer.

The sputtering process for forming the CE layer may utilize one or moresputter targets. In one example where one sputter target is used, thetarget may include nickel, tungsten, and tin. In some cases the sputtertarget also includes oxygen. The sputter target may include a grid orother overlapping shape where different portions of the grid include thedifferent relevant materials (e.g., certain portions of the grid mayinclude elemental nickel, elemental tungsten, elemental tin, anickel-tungsten alloy, a nickel-tin alloy, and/or a tungsten-tin alloy).In some cases, a sputter target may be an alloy of the relevantmaterials (e.g., two or more of nickel, tungsten, and tin). Where two ormore sputter targets are used, each sputter target may include one ofthe relevant materials (e.g., elemental and/or alloy forms of nickel,tungsten, and/or tin, any of which can be provided in oxide form). Thesputter targets may overlap in some cases. The sputter targets may alsorotate in some embodiments. As noted, the counter electrode layer istypically an oxide material. Oxygen may be provided as a part of thesputter target and/or sputter gas. In certain cases, the sputter targetsare substantially pure metals, and sputtering is done in the presence ofoxygen to form the oxide.

In one embodiment, in order to normalize the rate of deposition of theCE layer, multiple targets are used so as to obviate the need forinappropriately high power (or other inappropriate adjustment to desiredprocess conditions) to increase deposition rate. In one embodiment, thedistance between the CE target (cathode or source) to the substratesurface is between about 35 mm and about 150 mm; in another embodimentbetween about 45 mm and about 130 mm; and in another embodiment betweenabout 70 mm and about 100 mm.

As noted, one or more rotating targets may be used in some cases. Invarious cases, a rotating target may include an interior magnet. FIG. 9Apresents a view of a rotating target 900. Inside the rotating target 900is a magnet 902, which (when the target is supplied with appropriatepower) causes material to sputter off of the target surface 904 in asputter cone 906 (sputter cones are also sometimes referred to assputter plasmas). The magnet 902 may extend along the length of thesputter target 900. In various embodiments, the magnet 902 may beoriented to extend radially outward such that the resulting sputter cone906 emanates from the sputter target 900 in a direction normal to thetarget's surface 904 (the direction being measured along a central axisof the sputter cone 906, which typically corresponds to the averagedirection of the sputter cone 906). The sputter cone 906 may be v-shapedwhen viewed from above, and may extend along the height of the target900 (or the height of the magnet 902 if not the same as the height ofthe target 900). The magnet 902 inside the rotating target 900 may befixed (i.e., though the surface 904 of the target 900 rotates, themagnet 902 within the target 900 does not rotate) such that the sputtercone 906 is also fixed. The small circles/dots depicted in the sputtercone 906 represent sputtered material that emanates from the sputtertarget 900. Rotating targets may be combined with other rotating targetsand/or planar targets as desired.

In one example, two rotating targets are used to deposit a NiWSnOanodically coloring EC layer: a first target including nickel andtungsten, and a second target including tin (either or both optionallyin oxide form). FIG. 9B presents a top down view of a deposition systemfor depositing an anodically coloring layer in this manner. The nickeltungsten target 910 and the tin target 912 each include an interiormagnet 914. The magnets 914 are angled toward one another such that thesputter cones 916 and 918 from the nickel tungsten target 910 and tintarget 912, respectively, overlap. FIG. 9B also shows a substrate 920passing in front of the targets 910 and 912. As shown, the sputter cones916 and 918 closely overlap where they impact the substrate 920. In someembodiments, the sputter cones from various sputter targets may closelyoverlap with one another (e.g., the non-overlapping area over which onlya single sputter cone reaches when depositing on a substrate is lessthan about 10%, for example less than about 5% of the total area overwhich either sputter cone reaches). In other embodiments, the sputtercones may diverge from one another to a greater degree such that eitheror both of the sputter cones has a non-overlapping area that is at leastabout 10%, for example at least about 20%, or at least about 30%, or atleast about 50%, of the total area over which either sputter conereaches.

In a similar embodiment to the one shown in FIG. 9B, one sputter targetis tungsten and the other is an alloy of nickel and tin (either or bothtargets optionally being in oxide form). Similarly, one sputter targetmay be nickel and the other may be an alloy of tungsten and tin (eitheror both target optionally being in oxide form). In a related embodiment,three sputter targets are used: a tin target, a nickel target, and atungsten target (any of which can optionally be in oxide form). Thesputter cones from each of the three targets may overlap by angling themagnets as appropriate. Also, shielding, gratings and/or otheradditional plasma shaping elements may be used to aid in creating theappropriate plasma mixture to form the NiWSnO.

Various sputter target designs, orientations, and implementations arefurther discussed in U.S. patent application Ser. No. 13/462,725, filedMay 2, 2012, and titled “ELECTROCHROMIC DEVICES,” which is hereinincorporated by reference in its entirety.

The density and orientation/shape of material that sputters off of asputter target depends on various factors including, for example, themagnetic field shape and strength, pressure, and power density used togenerate the sputter plasma. The distance between adjacent targets, aswell as the distance between each target and substrate, can also affecthow the sputter plasmas will mix and how the resulting material isdeposited on the substrate.

In certain embodiments, two different types of sputter targets areprovided to deposit a single layer in an electrochromic stack: (a)primary sputter targets, which sputter material onto a substrate, and(b) secondary sputter targets, which sputter material onto the primarysputter targets. The primary and secondary sputter targets may includeany combination of metal, metal alloys, and metal oxides that achieve adesired composition in a deposited layer. In one particular example, aprimary sputter target includes an alloy of nickel and tungsten, and asecondary sputter target includes tin. In another example a primarysputter target includes tin and a secondary sputter target includes analloy of nickel and tungsten. These sputter targets may be used togetherto deposit an anodically coloring layer of NiWSnO. Other combinations ofalloys (e.g., nickel-tin, tungsten-tin) and metals (e.g., nickel,tungsten) can also be used. Any sputter target may be provided as anoxide.

A number of different setups are possible when using both primary andsecondary sputter targets. FIGS. 10A and 10B presents top-down views ofone embodiment of a deposition station for depositing a NiWSnOanodically coloring counter electrode layer. Though presented in thespecific context of depositing NiWSnO, the sputter target configurationsdiscussed herein may be used to deposit any material in theelectrochromic stack, provided that the targets are of appropriatecompositions to deposit the desired material in the stack. A primarysputter target 1001 and a secondary sputter target 1002 are provided,each with an internal magnet 1003. Each sputter target in this exampleis a rotating sputter target, though planar or other shaped targets maybe used as well. The targets may rotate in the same direction or inopposite directions. The secondary sputter target 1002 sputters materialonto the primary sputter target 1001 when no substrate 1004 is presentbetween the two targets, as shown in FIG. 10A. This deposits materialfrom the secondary sputter target 1002 onto the primary sputter target1001. Then, as the substrate 1004 moves into position between the twotargets, sputtering from the secondary sputter target 1002 ceases andsputtering from the primary sputter target 1001 onto the substrate 1004begins, as shown in FIG. 10B.

When material is sputtered off of the primary sputter target 1001 anddeposited onto the substrate 1004, the deposited material includesmaterial that originated from both the primary and secondary sputtertargets 1001 and 1002, respectively. In effect, this method involvesin-situ formation of an intermixed sputter target surface on the primarysputter target 1001. One advantage of this method is that a freshcoating of material from the secondary sputter target 1002 (e.g., insome cases this material is tin, tungsten, nickel, or combinationsand/or alloys thereof) is periodically deposited on the surface of theprimary sputter target 1001. The intermixed materials are then deliveredtogether to the substrate 1004.

In a related embodiment shown in FIG. 10C, a secondary sputter target1022 is positioned behind a primary sputter target 1021, and a substrate1024 passes in front of the primary sputter target 1021 such that itdoes not block the line of sight between the two targets 1021 and 1022.Each of the sputter targets may include a magnet 1023. In thisembodiment, there is no need to periodically stop sputtering from thesecondary sputter target 1021 onto the primary sputter target 1022.Instead, such sputtering can occur continuously. Where the primarysputter target 1021 is located in between the substrate 1024 and thesecondary sputter target 1022 (e.g., there is no line of sight betweenthe secondary sputter target 1022 and the substrate 1024), the primarysputter target 1021 should rotate such that material that is depositedonto the primary sputter target 1021 can be sputtered onto the substrate1024. There is more flexibility in the design of the secondary sputtertarget 1022. In a related embodiment, the secondary sputter target maybe a planar or other non-rotating target. Where two rotating targets areused, the targets may rotate in the same direction or in oppositedirections.

In similar embodiments, the secondary sputter target (e.g., thesecondary target in FIGS. 10A-10C) may be replaced with anothersecondary material source. The secondary material source may providematerial to the primary sputter target through means other thansputtering. In one example, the secondary material source providesevaporated material to the primary sputter target. The evaporatedmaterial may be any component of a layer being deposited. In variousexamples the evaporated material is an elemental metal or metal oxide.Particular examples of evaporated material include tin, tungsten, andnickel, which may be used to form a NiWSnO anodically coloring counterelectrode material. In one embodiment, elemental tin is evaporated ontoa primary sputter target including a mixture and/or alloy of nickel andtungsten. Tin is a particularly good evaporated material due to itsrelatively low melting point. Where a secondary material source providesevaporated material, the secondary material source may be provided atany location relative to the primary sputter target and substrate. Insome embodiments the secondary material source is provided such that itis behind and deposits primarily on the primary sputter target, muchlike the setup shown in FIG. 10C.

Where both a primary and a secondary sputter target are used, thesecondary sputter target may be operated at a potential that is cathodiccompared to the potential of the primary sputter target (which isalready cathodic). Alternatively, the targets may be operatedindependently. Still further, regardless of relative target potentials,neutral species ejected from the secondary target will deposit on theprimary target. Neutral atoms will be part of the flux, and they willdeposit on a cathodic primary target regardless of relative potentials.

In various embodiments, reactive sputtering may be used to deposit oneor more materials in the electrochromic stack. FIG. 11 is a diagramshowing the sputtering deposition rate from a sputter target as afunction of oxygen concentration at a fixed power. As shown in FIG. 11,there is a strong hysteresis effect related to the oxygen concentrationprofile the target has been exposed to/operated under. For instance,when starting from a low oxygen concentration and increasing to a higheroxygen concentration, the deposition rate stays fairly high until theoxygen concentration reaches a point at which the sputter target formsan oxide that cannot be removed from the target sufficiently quickly. Atthis point the deposition rate drops down, and the sputter targetessentially forms a metal oxide target. The deposition rate for an oxidetarget is generally much lower than the deposition rate for a metaltarget, all other conditions being equal. The relatively high depositionrate region in FIG. 11 corresponds to a metal deposition regime, whilethe relatively low deposition rate region corresponds to a metal oxidedeposition regime. When the target is initially exposed to/operatedunder a high oxygen concentration then exposed to/operated under arelatively lower concentration, the deposition rate stays fairly lowuntil the oxygen concentration reaches a point at which the depositionrate jumps up to a higher level. As shown in FIG. 11, the oxygenconcentration at which these changes take place is different dependingon whether the oxygen concentration is increasing or decreasing. Theexact oxygen concentrations at which the regime changes occur can becontrolled by changing the target power density and magnetic strength ofthe internal magnet 1003. For example, if one target is sputtering asubstantially higher flux of metal atoms from the surface (due to higherpower and/or magnetic strength), that target would likely stay in themetal deposition regime, compared to a target which is sputtering a verylow flux of metal atoms. Such hysteresis effects can be used toadvantage in a deposition process.

In certain embodiments where two or more sputter targets are used todeposit a material in the electrochromic stack, one target may beoperated in the metal deposition regime and another target may beoperated in the metal oxide deposition regime. By controlling the targetpower density, magnetic strength of the internal magnet 1003, and theatmosphere to which each target is exposed/operated under over time, itis possible to operate at both of these regimes simultaneously. In oneexample, a first nickel tungsten target is exposed to a relatively lowconcentration of oxygen and then brought to a mid-level concentration ofoxygen such that it operates in the metal deposition regime. A secondtin target is exposed to a relatively high concentration of oxygen andthen brought to a mid-level concentration of oxygen such that itoperates in the metal oxide deposition regime. The two targets can thenbe brought together, still exposed to the mid-level oxygenconcentration, where they are used to deposit material onto a substrateunder both regimes (the first target continuing to operate under themetal deposition regime and the second target continuing to operateunder the metal oxide deposition regime).

The different atmosphere exposures for each target may not be needed inmany cases. Other factors besides different historical oxygen exposurecan result in the targets operating under the different depositionregimes. For instance, the targets may have different hysteresis curvesdue to the different material in the targets. As such, the targets maybe able to operate under different regimes even if they are historicallyexposed to and operated under the same atmospheric oxygen conditions.Further, the amount of power applied to each target can significantlyaffect the deposition regime experienced by each target. In one example,therefore, one target is operated under a metal deposition regime andanother target is operated under a metal oxide deposition regime due tothe different powers applied to each target. This approach may be easierbecause it does not require separating the targets from one another suchthat they can be exposed to different oxygen concentrations. Oneadvantage to operating the targets at different points in the hysteresiscurves is that the composition of a deposited material can be closelycontrolled.

It should be understood that while the order of deposition operations isdepicted in FIG. 5 (and implied in FIG. 2) to be first EC layer, secondIC layer, and finally CE layer, the order can be reversed in variousembodiments. In other words, when as described herein “sequential”deposition of the stack layers is recited, it is intended to cover thefollowing “reverse” sequence, first CE layer, second IC layer, and thirdEC layer, as well the “forward” sequence described above. Both theforward and reverse sequences can function as reliable high-qualityelectrochromic devices. Further, it should be understood that conditionsrecited for depositing the various EC, IC, and CE materials recitedhere, are not limited to depositing such materials. Other materials may,in some cases, be deposited under the same or similar conditions.Moreover, the IC layer may be omitted in certain cases. Further,non-sputtering deposition conditions may be employed in some embodimentsto create the same or similar deposited materials as those described inthe context of sputtered materials.

Since the amount of charge each of the EC and the CE layers can safelyhold varies, depending on the material used, the relative thickness ofeach of the layers may be controlled to match capacity as appropriate.In one embodiment, the electrochromic layer includes tungsten oxide andthe counter electrode includes nickel tungsten tin oxide, and the ratioof thicknesses of the electrochromic layer to the counter electrodelayer is between about 1.7:1 and 2.3:1, or between about 1.9:1 and 2.1:1(with about 2:1 being a specific example).

Referring again to FIG. 5, operation 720, after the CE layer isdeposited, the EC stack is complete. It should be noted that in FIG. 4,process operation 720 which refers to “depositing stack” means in thiscontext, the EC stack plus the second TCO layer (sometimes referred toas the “ITO” when indium tin oxide is used to make the second TCO).Generally “stack” in this description refers to the EC-IC-CE layers;that is, the “EC stack.” Referring again to FIG. 5, in one embodiment,represented by process 728, a TCO layer is deposited on the stack.Referring to FIG. 2, this would correspond to second TCO layer 630 on ECstack 625. Process flow 720 is finished once process 728 is complete.Typically, but not necessarily, a capping layer is deposited on the ECstack. In some embodiments, the capping layer is SiAlO, similar to theIC layer, e.g.,

The methods and conditions for forming the various layers (e.g., TCOlayers, electrochromic layers, counter electrode layers, and ionconductor layers) are further described in U.S. patent application Ser.No. 12/645,111, filed Dec. 22, 2009, and titled “FABRICATION OF LOWDEFECTIVITY ELECTROCHROMIC DEVICES,” which is herein incorporated byreference in its entirety.

As mentioned, the EC stack is fabricated in an integrated depositionsystem where the substrate does not leave the integrated depositionsystem at any time during fabrication of the stack. In one embodiment,the second TCO layer is also formed using the integrated depositionsystem where the substrate does not leave the integrated depositionsystem during deposition of the EC stack and the TCO layer. In oneembodiment, all of the layers are deposited in the integrated depositionsystem where the substrate does not leave the integrated depositionsystem during deposition; that is, in one embodiment the substrate is aglass sheet and a stack including the EC layer, the IC layer and the CElayer, sandwiched between a first and a second TCO layer, is fabricatedon the glass where the glass does not leave the integrated depositionsystem during deposition. In another implementation of this embodiment,the substrate is glass with a diffusion barrier deposited prior to entryin the integrated deposition system. In another implementation thesubstrate is glass and the diffusion barrier, a stack including the EClayer, the IC layer and the CE layer, sandwiched between a first and asecond TCO layer, are all deposited on the glass where the glass doesnot leave the integrated deposition system during deposition.

As mentioned above, lithium may be provided with the EC, CE and/or IClayers as they are formed on the substrate. This may involve, forexample, co-sputtering of lithium together with the other materials of agiven layer (e.g., tungsten and oxygen). In certain embodimentsdescribed below the lithium is delivered via a separate process andallowed to diffuse or otherwise incorporate into the EC, CE and/or IClayers. In some embodiments, only a single layer in the electrochromicstack is lithiated. For example, only the anodically coloring CE layeris lithiated in some examples. In other cases, only the cathodicallycoloring EC layer is lithiated. In still other cases, only the IC layeris lithiated.

In some embodiments, the electrochromic stack includes a counterelectrode layer in direct physical contact with an electrochromic layer,without an ion conducting layer in between. The electrochromic and/orcounter electrode layer may include an oxygen-rich portion in contactwith the other of these layers. The oxygen-rich portion includes theelectrochromic material or counter electrode material, with a higherconcentration of oxygen than in the remaining portion of theelectrochromic layer and/or counter electrode layer. Electrochromicdevices fabricated according to such a design are further discussed anddescribed in U.S. Pat. No. 8,300,298, filed Apr. 30, 2010, which isincorporated by reference above.

In certain embodiments, fabrication of the electrochromic stack occursin an integrated deposition system. Such an integrated system may allowfor deposition of the various layers in the stack without breakingvacuum. In other cases, one or more layers in the stack may be depositedby a process that requires removal from a protected vacuum environment.For example, in some cases one or more layers (e.g., a cathodicallycoloring EC layer) is deposited on a substrate under vacuum usingphysical vapor deposition, then the substrate is removed from vacuum andan ion conductor layer is deposited using a sol-gel (or othernon-vacuum) process, and then the substrate is returned to a vacuumenvironment for deposition of the anodically coloring counter electrodelayer. Sol-gel processes involve producing solid materials from smallmolecules. Monomers are converted into a colloidal solution that acts asthe precursor for an integrated network of discrete particles or networkpolymers.

Direct Lithiation of the Electrochromic Stack

In some embodiments, as mentioned above, intercalation of lithium ionsis responsible for switching the optical state of an electrochromicdevice stack. It should be understood that the lithium may be introducedto the stack by various means. For example, lithium may be provided toone or more of these layers concurrently with the deposition of thematerial of the layer (e.g., concurrent deposition of lithium andtungsten oxide during formation of the EC layer). In some cases,however, the process of FIG. 5 may be punctuated with one or moreoperations for delivering lithium to the EC layer, the IC layer, and/orthe CE layer. For example, lithium may also be introduced via one ormore separate lithiation steps in which elemental lithium is deliveredwithout substantial deposition of other material. Such lithiationstep(s) may take place after deposition of the EC layer, the IC layer,and/or the CE layer. Alternatively (or in addition), one or morelithiation steps may take intermediate between steps performed todeposit a single layer. For example, a counter electrode layer may bedeposited by first depositing a limited amount of nickel tungsten tinoxide, followed by directly depositing lithium, and then concluded bydepositing additional amounts of nickel tungsten tin oxide. Suchapproaches may have certain advantages such as better separating thelithium from the ITO (or other material of a conductive layer) whichimproves adhesion and prevents undesirable side reactions. One exampleof a stack formation process employing a separate lithiation operationis presented in FIG. 6. In certain cases, the lithiation operation(s)takes place during while the deposition of a given layer is temporarilyhalted to allow lithium to be introduced before deposition of the layeris completed.

FIG. 6 depicts a process flow, 720 a, for depositing the stack onto asubstrate in a manner analogous to process 720 of FIG. 4. Process flow720 a includes depositing an EC layer, operation 722, depositing an IClayer, operation 724, and depositing a CE layer, operation 726, asdescribed in relation to FIG. 5. However, process flow 720 a differsfrom 720 by the addition of lithiation operations 723 and 727. In oneembodiment, the lithium is physical vapor deposited using an integrateddeposition system where the substrate does not leave the integrateddeposition system at any time during the sequential deposition of theelectrochromic layer, the ion conducting layer, the counter electrodelayer, and the lithium.

In certain embodiments, lithium is deposited using a high voltagelithium cathode since there are not many secondary electron emissionsduring lithium sputtering. In some embodiments, the power delivered toeffect sputtering is provided via direct current (DC). In otherembodiments, pulsed DC/AC reactive sputtering is used. In oneembodiment, where pulsed DC/AC reactive sputtering is used, thefrequency is between about 20 kHz and about 400 kHz, in anotherembodiment between about 100 kHz and about 300 kHz, in yet anotherembodiment between about 200 kHz and about 250 kHz, in anotherembodiment about 220 kHz. A lithium target is used. In one embodimentthe target is between about 80% (by weight) and 100% Li, in anotherembodiment between about 90% and about 99% Li, in another embodimentabout 99% Li. Typically, due to the extreme reactivity of elementallithium, lithiation is performed in an inert environment (e.g., argonalone). The power density used to sputter the lithium target is betweenabout 1 Watts/cm² and about 10 Watts/cm² (determined based on thedeposition surface area of the substrate); in another embodiment betweenabout 2 Watts/cm² and about 4 Watts/cm²; in yet another embodimentbetween about 2.5 Watts/cm² and about 3 Watts/cm²; in another embodimentabout 2.7 Watts/cm². In one embodiment the lithium sputtering is done ata pressure of between about 1 and about 20 mTorr, in another embodimentbetween about 5 and about 15 mTorr, in another embodiment about 10mTorr. The above conditions may be used in any combination with oneanother to effect deposition of a high quality lithiation process.

In one embodiment, lithium is deposited on both the EC layer and the CElayer as depicted in dual lithiation process 720 a. After the EC layeris deposited as described above, operation 722, lithium is sputtered onthe EC layer; see operation 723. Thereafter, the IC layer is deposited,operation 724, followed by the CE layer, operation 726. Then lithium isdeposited on the CE layer; see operation 727. In one embodiment where,e.g., the EC layer is tungsten oxide and about twice as thick as anickel tungsten tin oxide CE layer, the total amount of lithium added tothe stack is proportioned between the EC layer and the CE layer in aratio of about 1:3 to 2:3; that is, the EC layer is sputtered with ⅓ ofthe total lithium and the CE layer with about ⅔ of the total lithiumadded to the stack. In a specific embodiment, the lithium added to thestack is proportioned between the EC layer and the CE layer in a ratioof about 1:2.

In one embodiment of the dual lithiation method, as explained above, theEC layer is treated with sufficient lithium to satisfy the requirementsof the EC material irreversibly bound lithium (to, e.g., compensate“blind charge”). The lithium needed for reversible cycling is added tothe CE layer (which also may have a blind charge). In certainembodiments, the lithium needed to compensate the blind charge can betitrated by monitoring optical density of the EC layer as lithium isadded since the EC layer will not substantially change color untilsufficient lithium has been added to fully compensate the blind charge.

In some cases, the lithiation processes are performed with isolationprotocols in place. In one example, isolation protocols are performedwith isolation valves within the integrated deposition system. Forexample, once a substrate is moved into a lithiation station, isolationvalves shut to cut off the substrate from other stations and forexample, flush with argon or evacuate to prepare for the lithiation. Inanother embodiment, the isolation is achieved by manipulating thecontrolled ambient environment, e.g., by creating a flow dynamic in thecontrolled ambient environment via differential pressures in alithiation station of the integrated deposition system such that thelithium deposition is sufficiently isolated from other processes in theintegrated deposition system. In another embodiment, a combination ofthe aforementioned conditions are used. For example valves can partiallyclose (or the lithiation station can be configured so that the substrateentry and/or exit ports are minimized) and one or more flow dynamics areused to further isolate the lithiation process from adjoining processes.Referring again to FIG. 6, after the dual lithiation process asdescribed in operations 722-727, the (second) TCO layer is deposited(operation 728) as described above.

FIG. 7 depicts another process flow, 720 b, for depositing the stackonto a substrate. The process is analogous to process flow 700 of FIG.4. Process flow 720 b includes depositing an EC layer (operation 722)depositing an IC layer (operation 724) and depositing a CE layer(operation 726) as described in relation to FIG. 5. However, processflow 720 b differs from 720 because there is an intervening lithiationoperation 727. In this embodiment of the process of stack deposition,all the required lithium is added by delivering lithium to the CE layerand allowing the lithium to intercalate into the EC layer via diffusionthrough the IC layer during and/or after stack fabrication.

Multistep Thermochemical Conditioning

Referring again to FIG. 4, once the stack is deposited, the device issubjected to a multistep thermo-chemical conditioning (MTC) process (seeblock 730). Typically, the MTC process is performed only after alllayers of the electrochromic stack have been formed. Note that the MTCprocess can be conducted entirely ex situ, i.e., outside of theintegrated deposition system used to deposit the stack, or at leastpartially or wholly in situ, i.e., inside the deposition system withoute.g., breaking vacuum or otherwise moving the substrate outside thecontrolled ambient environment used to fabricate the stack. In certainembodiments, the initial portions of the MTC process are performed insitu, and later portions of the process are performed ex situ. Incertain embodiments, portions of the MTC are performed prior todeposition of certain layers, for example, prior to deposition of thesecond TCO layer.

In accordance with certain embodiments, the device is first thermallytreated under non-reactive conditions (e.g., under an inert gas). In aspecific embodiment, the device is heated at a temperature of betweenabout 200° C. and about 350° C. for between about 5 minutes and about 30minutes. In certain embodiments, this operation is conducted at lowpressure or vacuum. Next, the device is subjected to a thermal treatmentunder reactive conditions. In some embodiments, this involves annealingthe device in an oxidizing atmosphere (e.g., oxygen and inert gas atabout 10-50 mTorr). In specific embodiments, the annealing is conductedat higher pressures than the non-reactive thermal processing step. In aspecific embodiment, the device is heated at a temperature of betweenabout 200° C. and about 350° C. for between about 3 minutes and about 20minutes.

Optionally, after the oxidative anneal, the device is heated in air (exsitu). In one embodiment, the device is heated at between about 150° C.and about 500° C. for between about 1 minutes and about 60 minutes, inanother embodiment at between about 200° C. and about 400° C. forbetween about 5 minutes and about 30 minutes. It should be understoodthat the MTC process may include two, three, or more separate anddistinct operations. The three operations described here are providedsolely for purposes of exemplifying the process. Further, the processconditions presented here are appropriate for architectural glass, butmay have to be scaled for other applications, recognizing that the timeto heat a device is dependent upon the size of the device. After the MTCprocess is complete, the device is ready for further processing.

As mentioned above, additional layers may be needed for improved opticalperformance (e.g., anti-reflectives), durability (due to physicalhandling), hermeticity, and the like. Addition of one or more of theselayers is meant to be included in additional embodiments to thosedescribed above.

The lithiation and high temperature processing operations describedherein can affect the composition and structure of various materials inthe electrochromic stack. As one example, where an electrochromic stackincludes a cathodically coloring EC layer in direct contact with ananodically coloring CE layer (with no separate ion conducting layerdeposited in between them), the thermal processing operations can changethe composition and/or structure of the cathodically coloring EC andanodically coloring CE layers at an interfacial region between theselayers, to thereby form a region that has ion conducting, electronicallyinsulating properties. Similarly, lithiation and thermal processingoperations can affect the composition and structure of an anodicallycoloring counter electrode layer. In various cases an anodicallycoloring counter electrode layer is improved through such operations.

Fabrication Process for Completion of the Device

Again referring to FIG. 4, a second laser scribe (block 740) isperformed. Laser scribe 740 is performed across the length of thesubstrate near the outer edge of the stack, on the two sides of thesubstrate perpendicular to the first laser scribe. FIG. 3 shows thelocation of the trenches, 626, formed by laser scribe 740. This scribeis also performed all the way through the first TCO (and diffusionbarrier if present) to the substrate in order to further isolate theisolated portion of the first TCO layer (where the first bus bar will beconnected) and to isolate the stack coating at the edges (e.g., near amask) to minimize short circuits due to deposition roll off of the stacklayers.

Next, a third laser scribe, 745, is performed along the perimeter of thestack near the edge of the substrate opposite the first laser scribe andparallel to the first laser scribe. This third laser scribe is only deepenough to isolate the second TCO layer and the EC stack, but not cutthrough the first TCO layer. Referring to FIG. 2, laser scribe 745 formsa trench, 635, which isolates the uniform conformal portions EC stackand second TCO from the outermost edge portions which can suffer fromroll off (e.g., as depicted in FIG. 2, the portion of layers 625 and 630near area 650 isolated by cutting trench 635) and thus cause shortsbetween the first and second TCO layers in region 650 near where thesecond bus bar will be attached. Trench 635 also isolates roll offregions of the second TCO from the second bus bar. Trench 635 is alsodepicted in FIG. 3.

Referring again to process 700, in FIG. 4, after the third laser scribe,the bus bars are attached, process 750. After the bus bars areconnected, the device is integrated into an IGU, process 755. The IGU isformed by placing a gasket or seal (e.g., made of PVB (polyvinylbutyral), PIB or other suitable elastomer) around the perimeter of thesubstrate. Typically, but not necessarily, a desiccant is included inthe IGU frame or spacer bar during assembly to absorb any moisture. Inone embodiment, the seal surrounds the bus bars and electrical leads tothe bus bars extend through the seal. After the seal is in place, asecond sheet of glass is placed on the seal and the volume produced bythe substrate, the second sheet of glass and the seal is filled withinert gas, typically argon. Once the IGU is complete, process 700 iscomplete. The completed IGU can be installed in, for example, a pane,frame or curtain wall and connected to a source of electricity and acontroller to operate the electrochromic window.

In addition to the process steps described in relation to the methodsabove, an edge deletion step or steps may be added to the process flow.Edge deletion is part of a manufacturing process for integrating theelectrochromic device into, e.g., a window, where the roll off (asdescribed in relation to FIG. 2) is removed prior to integration of thedevice into the window. Where unmasked glass is used, removal of thecoating that would otherwise extend to underneath the IGU frame(undesirable for long term reliability) is removed prior to integrationinto the IGU. This edge deletion process is meant to be included in themethods above as an alternative embodiment to those listed above.

In certain embodiments, a different process flow may be used tofabricate an electrochromic device. Alternative process flows arefurther discussed in U.S. patent application Ser. No. 14/362,863, filedJun. 4, 2014, and titled “THIN-FILM DEVICES AND FABRICATION,” which isherein incorporated by reference in its entirety. For example, an ECdevice may have no isolation scribes if such processes are used.

Integrated Deposition System

As explained above, an integrated deposition system may be employed tofabricate electrochromic devices on, for example, architectural glass.As described above, the electrochromic devices are used to make IGUswhich in turn are used to make electrochromic windows. The term“integrated deposition system” means an apparatus for fabricatingelectrochromic devices on optically transparent and translucentsubstrates. The apparatus has multiple stations, each devoted to aparticular unit operation such as depositing a particular component (orportion of a component) of an electrochromic device, as well ascleaning, etching, and temperature control of such device or portionthereof. The multiple stations are fully integrated such that asubstrate on which an electrochromic device is being fabricated can passfrom one station to the next without being exposed to an externalenvironment. Integrated deposition systems herein operate with acontrolled ambient environment inside the system where the processstations are located. A fully integrated system allows for bettercontrol of interfacial quality between the layers deposited. Interfacialquality refers to, among other factors, the quality of the adhesionbetween layers and the lack of contaminants in the interfacial region.The term “controlled ambient environment” means a sealed environmentseparate from an external environment such as an open atmosphericenvironment or a clean room. In a controlled ambient environment atleast one of pressure and gas composition is controlled independently ofthe conditions in the external environment. Generally, though notnecessarily, a controlled ambient environment has a pressure belowatmospheric pressure; e.g., at least a partial vacuum. The conditions ina controlled ambient environment may remain constant during a processingoperation or may vary over time. For example, a layer of anelectrochromic device may be deposited under vacuum in a controlledambient environment and at the conclusion of the deposition operation,the environment may be backfilled with purge or reagent gas and thepressure increased to, e.g., atmospheric pressure for processing atanother station, and then a vacuum reestablished for the next operationand so forth.

In one embodiment, the system includes a plurality of depositionstations aligned in series and interconnected and operable to pass asubstrate from one station to the next without exposing the substrate toan external environment. The plurality of deposition stations comprise(i) a first deposition station containing one or more targets fordepositing a cathodically coloring electrochromic layer; (ii) a seconddeposition station containing one or more targets for depositing an ionconducting layer; and (iii) a third deposition station containing one ormore targets for depositing a counter electrode layer. The seconddeposition station may be omitted in certain cases. For instance, theapparatus may not include any target for depositing a separate ionconductor layer.

The system also includes a controller containing program instructionsfor passing the substrate through the plurality of stations in a mannerthat sequentially deposits on the substrate (i) an electrochromic layer,(ii) an (optional) ion conducting layer, and (iii) a counter electrodelayer to form a stack. In one embodiment, the plurality of depositionstations are operable to pass a substrate from one station to the nextwithout breaking vacuum. In another embodiment, the plurality ofdeposition stations are configured to deposit the electrochromic layer,the optional ion conducting layer, and the counter electrode layer on anarchitectural glass substrate. In another embodiment, the integrateddeposition system includes a substrate holder and transport mechanismoperable to hold the architectural glass substrate in a verticalorientation while in the plurality of deposition stations. In yetanother embodiment, the integrated deposition system includes one ormore load locks for passing the substrate between an externalenvironment and the integrated deposition system. In another embodiment,the plurality of deposition stations include at least two stations fordepositing a layer selected from the group consisting of thecathodically coloring electrochromic layer, the ion conducting layer,and the anodically coloring counter electrode layer.

In some embodiments, the integrated deposition system includes one ormore lithium deposition stations, each including a lithium containingtarget. In one embodiment, the integrated deposition system contains twoor more lithium deposition stations. In one embodiment, the integrateddeposition system has one or more isolation valves for isolatingindividual process stations from each other during operation. In oneembodiment, the one or more lithium deposition stations have isolationvalves. In this document, the term “isolation valves” means devices toisolate depositions or other processes being carried out one stationfrom processes at other stations in the integrated deposition system. Inone example, isolation valves are physical (solid) isolation valveswithin the integrated deposition system that engage while the lithium isdeposited. Actual physical solid valves may engage to totally orpartially isolate (or shield) the lithium deposition from otherprocesses or stations in the integrated deposition system. In anotherembodiment, the isolation valves may be gas knifes or shields, e.g., apartial pressure of argon or other inert gas is passed over areasbetween the lithium deposition station and other stations to block ionflow to the other stations. In another example, isolation valves may bean evacuated regions between the lithium deposition station and otherprocess stations, so that lithium ions or ions from other stationsentering the evacuated region are removed to, e.g., a waste streamrather than contaminating adjoining processes. This is achieved, e.g.,via a flow dynamic in the controlled ambient environment viadifferential pressures in a lithiation station of the integrateddeposition system such that the lithium deposition is sufficientlyisolated from other processes in the integrated deposition system.Again, isolation valves are not limited to lithium deposition stations.

FIG. 8A, depicts in schematic fashion an integrated deposition system800 in accordance with certain embodiments. In this example, system 800includes an entry load lock, 802, for introducing the substrate to thesystem, and an exit load lock, 804, for removal of the substrate fromthe system. The load locks allow substrates to be introduced and removedfrom the system without disturbing the controlled ambient environment ofthe system. Integrated deposition system 800 has a module, 806, with aplurality of deposition stations; an EC layer deposition station, an IClayer deposition station and a CE layer deposition station. In thebroadest sense, integrated deposition systems herein need not have loadlocks, e.g., module 806 could alone serve as the integrated depositionsystem. For example, the substrate may be loaded into module 806, thecontrolled ambient environment established and then the substrateprocessed through various stations within the system. Individualstations within an integrated deposition systems can contain heaters,coolers, various sputter targets and means to move them, RF and/or DCpower sources and power delivery mechanisms, etching tools e.g., plasmaetch, gas sources, vacuum sources, glow discharge sources, processparameter monitors and sensors, robotics, power supplies, and the like.

FIG. 8B depicts a segment (or simplified version) of integrateddeposition system 800 in a perspective view and with more detailincluding a cutaway view of the interior. In this example, system 800 ismodular, where entry load lock 802 and exit load lock 804 are connectedto deposition module 806. There is an entry port, 810, for loading, forexample, architectural glass substrate 825 (load lock 804 has acorresponding exit port). Substrate 825 is supported by a pallet, 820,which travels along a track, 815. In this example, pallet 820 issupported by track 815 via hanging but pallet 820 could also besupported atop a track located near the bottom of apparatus 800 or atrack, e.g., mid-way between top and bottom of apparatus 800. Palletsfor fabricating electrochromic devices are further described in P.C.T.Patent Application No. PCT/US14/41569, filed Jun. 9, 2014, and titled“GLASS PALLET FOR SPUTTERING SYSTEMS,” which is herein incorporated byreference in its entirety. Pallet 820 can translate (as indicated by thedouble headed arrow) forward and/or backward through system 800. Forexample during lithium deposition, the substrate may be moved forwardand backward in front of a lithium target, 830, making multiple passesin order to achieve a desired lithiation. Pallet 820 and substrate 825are in a substantially vertical orientation. A substantially verticalorientation is not limiting, but it may help to prevent defects becauseparticulate matter that may be generated, e.g., from agglomeration ofatoms from sputtering, will tend to succumb to gravity and therefore notdeposit on substrate 825. Also, because architectural glass substratestend to be large, a vertical orientation of the substrate as ittraverses the stations of the integrated deposition system enablescoating of thinner glass substrates since there are less concerns oversag that occurs with thicker hot glass.

Target 830, in this case a cylindrical target, is oriented substantiallyparallel to and in front of the substrate surface where deposition is totake place (for convenience, other sputter means are not depicted here).Substrate 825 can translate past target 830 during deposition and/ortarget 830 can move in front of substrate 825. The movement path oftarget 830 is not limited to translation along the path of substrate825. Target 830 may rotate along an axis through its length, translatealong the path of the substrate (forward and/or backward), translatealong a path perpendicular to the path of the substrate, move in acircular path in a plane parallel to substrate 825, etc. Target 830 neednot be cylindrical, it can be planar or any shape necessary fordeposition of the desired layer with the desired properties. Also, theremay be more than one target in each deposition station and/or targetsmay move from station to station depending on the desired process.

Integrated deposition system 800 also has various vacuum pumps, gasinlets, pressure sensors and the like that establish and maintain acontrolled ambient environment within the system. These components arenot shown, but rather would be appreciated by one of ordinary skill inthe art. System 800 is controlled, e.g., via a computer system or othercontroller, represented in FIG. 8B by an LCD and keyboard, 835. One ofordinary skill in the art would appreciate that embodiments herein mayemploy various processes involving data stored in or transferred throughone or more computer systems. The present embodiments also relate to theapparatus, such computers and microcontrollers, for performing theseoperations. These apparatus and processes may be employed to depositelectrochromic materials of methods and apparatus described hereindesigned to implement them. The control apparatus may be speciallyconstructed for the required purposes, or it may be a general-purposecomputer selectively activated or reconfigured by a computer programand/or data structure stored in the computer. The processes presentedherein are not inherently related to any particular computer or otherapparatus. In particular, various general-purpose machines may be usedwith programs written in accordance with the teachings herein, or it maybe more convenient to construct a more specialized apparatus to performand/or control the required method and processes.

As mentioned, the various stations of an integrated deposition systemmay be modular, but once connected, form a continuous system where acontrolled ambient environment is established and maintained in order toprocess substrates at the various stations within the system. FIG. 8Cdepicts integrated deposition system 800 a, which is like system 800,but in this example each of the stations is modular, specifically, an EClayer station 806 a, an IC layer station 806 b and a CE layer station806 c. In a similar embodiment, the IC layer station 806 b is omitted.Modular form is not necessary, but it is convenient, because dependingon the need, an integrated deposition system can be assembled accordingto custom needs and emerging process advancements. For example, FIG. 8Ddepicts an integrated deposition system, 800 b, with two lithiumdeposition stations, 807 a and 807 b. System 800 b is, e.g., equipped tocarry out methods as described above, such as the dual lithiation methoddescribed in conjunction with FIG. 6. System 800 b could also be used tocarry out a single lithiation method, e.g., that described inconjunction with FIG. 7, for example by only utilizing lithium station807 b during processing of the substrate. But with modular format, e.g.,if single lithiation is the desired process, then one of the lithiationstations is redundant and system 800 c, as depicted in FIG. 8E can beused. System 800 c has only one lithium deposition station, 807.

Systems 800 b and 800 c also have a TCO layer station, 808, fordepositing the TCO layer on the EC stack. Depending on the processdemands, additional stations can be added to the integrated depositionsystem, e.g., stations for cleaning processes, laser scribes, cappinglayers, MTC, etc.

Experimental Results

Experimental results have shown that the disclosed NiWSnO materialsexhibit very high quality coloring characteristics. In particular, theNiWSnO materials are very clear (transparent) in their untinted state,having less color (particularly yellow color) as compared to othermaterials that are somewhat colored in their untinted states.

NiWSnO Deposition

Mixed nickel tungsten tin oxide, NiWSnO, was deposited using repeateddeposition of very thin layers of sputtered material as the substratewas rastered back-and-forth in a deposition chamber. Reactive sputteringof NiW alloy and Sn metal targets in a mixture of argon and molecularoxygen with a chamber pressure of approximately 10 mTorr was used. TheNiW alloy target was produced using a Hot Isostatic Press (HIP) method.The power to each target was independently controlled using twosynchronized pulsed DC power supplies. The ratio of Sn to Ni+W wasadjusted by varying the power ratio between the two targets. Thethickness of the NiWSnO for a given set of power conditions could bechanged by increasing or decreasing the speed of the substrate as itmoves through the deposition chamber. In order to achieve the desiredthickness of the entire counter-electrode, the number of passes in frontof the targets was increased or decreased as needed. The degree ofoxidation of the film was controlled by adjusting the partial pressuresof Ar and O₂ in the sputtering gas, as well as the total pressure.Through the manipulation of these process parameters, the ratio ofNiW:Sn:O could be controlled. Heaters were used for temperaturevariation, but the highest-performance films and devices were depositedwithout additional heating. The substrate temperature was typically lessthan 100° C.

As an example, a high performance counter electrode was achieved bysputtering in a pure oxygen environment with power and substrate speedsettings chosen to achieve a thickness of less than 5 nm per pass. Morethan 150 passes through the deposition system were performed to buildfilm thickness. The power supplies for the two sputter targets werechosen such that the NiW power (6 kW) was about 12× the Sn power (0.5kW). The resulting Ni:(W+Sn) ratio was approximately 2, measured usingRBS. The performance of a device with this counter electrode formulationis listed below.

Example of Performance Improvement Resulting from NIWSnO Material

The table below compares key metrics for a device with a NiWSnOanodically coloring counter electrode compared to an all solid state andinorganic electrochromic device having a NiWO anodically coloringcounter electrode layer. Other than the different materials of thecounter electrode, the devices were otherwise identical. In this examplethe devices both used tungsten oxide cathodically coloringelectrochromic layers. The device with NiWSnO counter electrode has asmall increase in photopic transmission and a dramatic decrease in theCIE coordinate (b*) that quantifies the yellow appearance of the devicein transmission. In other words, the significantly lower b* of thedevice having the NiWSnO counter electrode indicates that this deviceappeared less yellow in its neutral/clear state. Since thecounter-electrode is required to function as a charge storage layer, thetable below shows that the improvements in transmission in the neutralstate are not gained at the expense of device coloration, which isslightly improved relative to the comparison device having the NiWOcounter electrode.

NiWO NiWSnO Neutral State Transmitted b* 16.9 11.3 Neutral StatePhotopic Transmission (% T) 70.0 71.3 Color State Transmission (% T) 2.11.6

Although the foregoing embodiments have been described in some detail tofacilitate understanding, the described embodiments are to be consideredillustrative and not limiting. It will be apparent to one of ordinaryskill in the art that certain changes and modifications can be practicedwithin the scope of the appended claims.

What is claimed is:
 1. A method of fabricating an electrochromic device,the method comprising: (a) forming either an electrochromic layercomprising tungsten oxide or a counter electrode layer comprisingnickel-tungsten-tin-oxide (NiWSnO), wherein the electrochromic layer orthe counter electrode layer formed in (a) includes an oxygen-richportion comprising an oxygen-rich tungsten oxide or an oxygen-richNiWSnO, respectively; (b) forming the other of the electrochromic layercomprising the tungsten oxide and the counter electrode layer comprisingthe NiWSnO directly on the electrochromic layer or the counter electrodelayer formed in (a), without first providing an ion conductingelectronically insulating layer between the electrochromic layer and thecounter electrode layer; and (c) converting at least a portion of theoxygen-rich tungsten oxide or the oxygen-rich NiWSnO to a material thatis substantially ion conducting and substantially electronicallyinsulating.
 2. The method of claim 1, wherein the electrochromic layeris deposited in (a) and comprises the oxygen-rich tungsten oxide, andwherein the counter electrode layer is deposited in (b) directly incontact with the oxygen-rich tungsten oxide.
 3. The method of claim 2,wherein (c) comprises converting at least a portion of oxygen-richtungsten oxide to the material that is substantially ion conducting andsubstantially electronically insulating.
 4. The method of claim 1,wherein the counter electrode layer is deposited in (a) and comprisesthe oxygen-rich NiWSnO, and wherein the electrochromic layer isdeposited in (b) directly in contact with the oxygen-rich NiWSnO.
 5. Themethod of claim 4, wherein (c) comprises converting at least a portionof the oxygen-rich NiWSnO to the material that is substantially ionconducting and substantially electronically insulating.
 6. The method ofclaim 1, wherein the oxygen-rich portion of the electrochromic layer orthe counter electrode layer formed in (a) is provided as a distinctoxygen-rich sub-layer within the electrochromic layer or the counterelectrode layer formed in (a).
 7. The method of claim 1, wherein theoxygen-rich portion of the electrochromic layer or the counter electrodelayer formed in (a) is provided within a graded layer.
 8. The method ofclaim 7, wherein the graded layer comprises an oxygen concentrationgradient in a direction normal to a surface of the electrochromic layerand the counter electrode layer.
 9. The method of claim 1, wherein theelectrochromic layer is doped with one or more of molybdenum, titanium,and vanadium.
 10. An integrated deposition system for fabricating anelectrochromic stack, the integrated deposition system comprising: aplurality of deposition stations aligned in series and interconnectedand operable to pass a substrate from one station to the next withoutexposing the substrate to an external environment, wherein the pluralityof deposition stations comprise (i) a first deposition stationcontaining a first one or more material sources for depositing acathodically coloring layer; (ii) a second deposition station containinga second one or more material sources for depositing an anodicallycoloring layer comprising nickel-tungsten-tin-oxide (NiWSnO); and acontroller comprising program instructions for passing the substratethrough the plurality of deposition stations in a manner that depositson the substrate (i) the cathodically coloring layer, and (ii) theanodically coloring layer in direct contact with each other.
 11. Theintegrated deposition system of claim 10, wherein the NiWSnO comprisesan atomic ratio of Ni:(W+Sn) that is between about 1:1 and 4:1.
 12. Theintegrated deposition system of claim 11, wherein the NiWSnO comprisesan atomic ratio of Ni:(W+Sn) that is between about 1:1 and 3:1.
 13. Theintegrated deposition system of claim 12, wherein the NiWSnO comprisesan atomic ratio of Ni:(W+Sn) that is between about 1.5:1 and 2.5:1. 14.The integrated deposition system of claim 13, wherein the NiWSnOcomprises an atomic ratio of Ni:(W+Sn) that is between about 2:1 and2.5:1.
 15. The integrated deposition system of claim 10, wherein theNiWSnO comprises an atomic ratio of W:Sn that is between about 1:1 and3:1.
 16. The integrated deposition system of claim 15, wherein theNiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and2.5:1.
 17. The integrated deposition system of claim 16, wherein theNiWSnO comprises an atomic ratio of W:Sn that is between about 1.5:1 and2:1.
 18. The integrated deposition system of claim 10, wherein at leastone of the second one or more material sources for depositing theanodically coloring layer comprise an elemental metal selected from thegroup consisting of: nickel, tungsten, and tin.
 19. The integrateddeposition system of claim 10, wherein at least one of the second one ormore material sources for depositing the anodically coloring layercomprise an alloy comprising two or more metals selected from the groupconsisting of: nickel, tungsten, and tin.
 20. The integrated depositionsystem of claim 10, further comprising one or more lithium sources. 21.The integrated deposition system of claim 20, wherein the controllercomprises instructions for passing the substrate through the pluralityof deposition stations in a manner that deposits lithium on thecathodically coloring layer and/or on the anodically coloring layer.